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Our DBI® hybrid bonding technology is backed by decades of research. Learn how this remarkable technology is driving unprecedented miniaturization, performance, and efficiency to enable the future of semiconductor packaging.

Low Temperature InP/Si Wafer Bonding
Research Paper / Applied Physics Letters / February 15, 2004
By Q.Y. Tong, G. Gan, G. Hudson, G. Fountain and P. Enquist
An oxide-free, covalently bonded interface of InP/silicon wafer pairs has been realized at low temperature by plasma treatment of bonding surfaces in the reactive ion etch mode followed by a HF dip and room temperature bonding in air. The bonding energy reaches InP fracture surface energy of 630 mJ/m² at 200 °C.
Low-Temperature Hydrophobic Silicon Wafer Bonding
Research Paper / Applied Physics Letters / December 12, 2003
By Q.Y. Tong, G. Gan, G. Hudson, G. Fountain, P. Enquist, R. Scholz, and U. Gosele
By introducing a nanometer-scale H trapping defective silicon layer on bonding surfaces, the bonding surface energy of bonded oxide-free, HF dipped, hydrophobic silicon wafers can reach a silicon fracture surface energy of 2500 at 300 to 400 °C compared with 700 °C conventionally achieved.

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